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September 2013
FDD3670
100V N-Channel PowerTrench ? MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
? 34 A, 100 V. R DS(ON) = 32 m ? @ V GS = 10 V
R DS(ON) = 35 m ? @ V GS = 6 V
? Low gate charge (57 nC typical)
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D
G
S
TO-252
D
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Drain Current
Drain Current
– Continuous
– Pulsed
(Note 1)
(Note 3)
34
100
A
P D
Maximum Power Dissipation @ T C = 25 ° C
@ T A = 25 ° C
@ T A = 25 ° C
(Note 1)
(Note 1a)
(Note 1b)
83
3.8
1.6
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ J C
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
1.8
96
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD3670
Device
FDD3670
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDD3670 Rev C1
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相关代理商/技术参数
FDD3670_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET
FDD3672 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3672_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ
FDD3672_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ
FDD3672_F085 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3672_Q 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3672-CUT TAPE 制造商:FAIRCHILD 功能描述:FDD3672 Series 100 V 28 mOhm N-Channel UltraFET Trench Mosfet TO-252AB
FDD3680 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube